| 摘要 |
PURPOSE:To enable to reduce the cell size per division by perfectly eliminating the dispersion of the channel length of a transfer gate region due to the shortage in mask alignment accuracy by enabling to form the vertical register part and the photoelectric conversion part in self-alignment. CONSTITUTION:After phosphorus ion implantation with channel stop regions 24 and an Si dioxide film 34 remaining on the transfer gate region 20 as a mask, about 1,600Angstrom Si dioxide films 35 are formed by high temperature oxidizing treatment in an oxidizing atmosphere. Thereafter, the phosphorus ion-implanted in the former process is diffused to the depth of about 2mum by high temperature treatment, thus the N type layer serving as the buried channel of the vertical register 19 and the N type layer of the photoelectric conversion part 22 are formed at the same time. By this process, it follows that the vertical register 19 and the photoelectric conversion part 22 are formed in self-alignment, resulting in no dispersion of the channel length of the transfer gate region 20 due to the shortage in mask alignment accuracy. |
