| 摘要 |
PURPOSE:To improve the absolute sensitivity by nitriding a part of a silicon oxide layer to form the silicon nitride layer of FET. CONSTITUTION:A p type silicon substrate 11 contains an n type source 12 and an impurity diffusing area of an n type drain 13, and a field oxidized film 16 of about 5,000Angstrom and an electrical connection 17 are formed. A silicon oxide layer 24 on a channel and a silicon nitride layer 25 thereon are thinly formed. The silicon nitride layer 25 is formed by nitriding directly a part of the silicon oxide layer 24. |
