| 摘要 |
PURPOSE:To obtain an FET having excellent characteristics by previously coating the upper sections of source and drain regions with oxidation-resisting films when an insular semiconductor layer consisting of polycrystalline Si is formed on a glass substrate, the semiconductor layer between the source and drain regions is removed through etching, a gate electrode is formed through a naturally shaped gate oxide film, the source and drain regions are formed with the electrode as a mask, and electrodes are formed to these regions. CONSTITUTION:An insular polycrystalline Si layer 8 is formed on a glass substrate 7, the whole surface containing the layer 8 is coated with the laminated films of an SiO2 film 9 and an Si3N4 film 10, and a channel forming section is removed. An SiO2 film 11 intruding to the layer 8 is formed to the channel forming section through heat treatment, the film 11 is removed through etching, and a gate electrode 12 is shaped through a natural SiO2 film 11 generated at that time. Ions are implanted into the layer 8 to form source and drain regions, the whole surface is coated with an oxidation-resisting protective film 13, and windows are bored and electrodes 14 are each shaped in the source and drain regions. |
