发明名称 |
SOS Mosfet with thinned channel contact region |
摘要 |
A MOS type semiconductor device formed on an insulating layer and having a substrate electrode. A first semiconductor layer for forming a MOS type element is formed on the insulating layer and has a substrate region where a channel is to be formed. To this substrate region is connected a second semiconductor layer which is thinner than the first semiconductor layer and which has the same conductivity type as that of the substrate region where the channel is to be formed.
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申请公布号 |
US4484209(A) |
申请公布日期 |
1984.11.20 |
申请号 |
US19810313338 |
申请日期 |
1981.10.20 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
UCHIDA, YUKIMASA |
分类号 |
H01L21/86;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L29/78;H01L27/02 |
主分类号 |
H01L21/86 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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