| 摘要 |
A phase change memory device and a method for manufacturing the same are provided to increase the interval between PN diodes by arranging the PN diodes to be zigzag with an active region. A plurality of active areas(110) is extended in first direction while including a plurality of active regions. A switching element is arranged on the top of the plurality of active regions to be zigzag along a first direction. The lamination pattern of a phase change film and top electrode(134) is connected with a pair of switching elements which are adjacent with each other. The top electrode contact(150) is formed in order to connect to the top electrode, and the switching element is a vertical type PN diode(131).
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