| 摘要 |
PURPOSE:To improve yield at a platinum silicide formation process by a method wherein piping of argon gas is performed up to the inside of the chamber of a sputtering device. CONSTITUTION:A piping 4' of argon gas is elongated inside of a chamber 1, and argon gas is fed from the right and left of a holder 2. Therefore, during presputtering in shutter 3 closed condition, and even when sputtering onto a semiconductor substrate 6 is performed by opening the shutter 3, substitution of argon gas in space inside of the holder 2 is performed favorably. Accordingly, interfacial condition between the substrate 6 and platinum to be sputtered is improved, and generation of platinum silicide formation inferiority at a post process can be checked. |
