发明名称 FORMATION OF PASSIVATION FILM
摘要 PURPOSE:To conduct works safely and easily, to attach gas powders uniformly as well as to contrive upgrade of the characteristics of semiconductor elements and the reliability thereof by a method wherein migration solution is produced by bubbling gas, which is generated by bubbling nitrogen gas to ammonia water, in a powdered glass dispersing solution and a DC voltage is impressed thereon using the migration solution. CONSTITUTION:Ammonia water 4 is stored in an ammonia water tank 3 and nitrogen gas is bubbled to the stored ammonia water 4 through an introducing tube 6. By performing this bubbling, ammonia gas is generated from the ammonia water 4 and, at the same time, the ammonia gas is diluted with the nitrogen gas. The ammonia gas diluted with the nitrogen gas is led into a migration tank 1 through an introducing tube 7 and is performed a bubbling. Isopropyl alcohol having been dispersed powdered glasses therein has been previously put in the migration tank 1 as a powdered glass dispersing solution 2. The powdered glasses dispersed by performing a bubbling of ammonia gas diluted with nitrogen into the dispersing solution 2 are electrified and the dispersing solution is turned into a migration solution. The uniform attachment of glass powders is performed by applying a DC voltage to the migration solution 8 in the migration tank 1 according to a power source 10 using semiconductor elements as a cathode 9 and the opposed electrodes as an anode.
申请公布号 JPS59202639(A) 申请公布日期 1984.11.16
申请号 JP19830076787 申请日期 1983.04.30
申请人 SHARP KK 发明人 KAWANABE HITOSHI
分类号 H01L21/56;H01L21/316 主分类号 H01L21/56
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