| 摘要 |
PURPOSE:To obtain a thin-film, both resistance and mobility thereof are high, by forming an indium-antimony group composite crystal thin-film, an atomic ratio to antimony therein of total indium therein is kept within a specific range, through evaporation and evaporating antimony. CONSTITUTION:The contents of indium and antimony are controlled so that an atomic ratio to antimony of the sum total of indium in InSb and indium as a simple substance is kept within a range of 1.1-1.7. Both elements within the range display mobility particularly higher than those outside the range, and can form a practical thin-film. Only antimony is evaporated on an indium-antimony group comosite crystal thin-film, indium therein is extremely excessive as mentioned above. Accordingly, indium as the simple substance in the composite crystal is changed into InSb, mobility does not lower, and a thin-film having high resistance is obtained.
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