| 摘要 |
PURPOSE:To obtain exposed resist pattern in the dry process by forming a resist film with a low polymerization degree through the 2-step control of substrate temperature and removing the film. CONSTITUTION:A substrate 1 is kept at -100 deg.C and exposed to a resist (stylene) with a low polymerization degree. Thickness of film 2 is adjusted by a flow rate of it. It is then exposed to form a resist pattern 3 of high polymerization degree. The resist pattern 3 is then kept at about 20 deg.C and unexposed resist 2 is removed. With the pattern 3 used as the mask, specified processing such as vacuum-deposition is carried out. Thereafter, a substrate temperature is raised up to about 250 deg.C or the mask 3 is removed by plasma etching in order to form the specified device pattern 4. Since all processes are carried out under the dry ambient, processes are more simplified than that under the wet ambient with less probability of contamination and high yield. |
