| 摘要 |
<p>PURPOSE:To obtain a semiconductor device which is small in size and light in weight and has excellent heat dissipating efficiency by a method wherein the 1st conductive pattern is formed on a metal substrate, which is to be a heat dissipating substrate, with a flame spraied insulating layer in between and the 2nd conductive pattern is formed directly on the metal substrate and semiconductor elements are fixed on the two patterns and covered with a sealing cover and prescribed electrodes are protruded from the cover and those parts are molded with plastic. CONSTITUTION:The 1st conductive pattern 27 is formed on a metal substrate 31, which is to be a heat dissipating substrate, with a flame spraied insulating layer 29 in between and the 2nd conductive pattern 28 is formed directly on the substrate 31. Then diodes 4a and 4b are fitted on these patterns 27 and 28 respectively and they are enclosed air-tightly by a cover 38. After that an input electrode 23b, which connects the diodes 4a and 4b, and a rod electrode 25', which is connected to the pattern 27, are drawn out, piercing through the cover 38. After the 2nd and the 1st flat board electrodes 42 and 40 are connected to the electrodes 23b and 25' respectively, these electrode parts are surrounded by a plastic molded part 39 using adhesive 44.</p> |
