| 摘要 |
PURPOSE:To provide a titled device having high sputtering efficiency and the utilizing efficiency of a target by disposing plate- or bar-shaped magnets of which the end parts formed with N and S poles are curved respectively diagonally upward toward the outside with respect to the S-N axis beneath the target. CONSTITUTION:A target electrode 16 constituting a sputtering gun 13 in a sputtering devce of a planar magnetron type is constituted, for example, in the following way: Plate- or bar-shaped magnets 3 of which the respective ends formed with an N or S pole are curved upward by, for example, about 45 deg., with respect to the S-N axis are disposed in the cavity formed of a backing plate 2 and a bottom plate 1 consisting of copper, etc. A target 5 consisting of a metal such as Al, Mo or the like or the silicide, etc. thereof is disposed above the plate 2. The magnetic flux phi obtd. by such constitution is formed mainly in the upper part of the target 5 and therefore almost all the magnetic force possessed by the magnets 3 is concentrated onto the target 5, by which the plasma generating efficiency is improved and the growing rate by sputtering is consequently improved. |
