发明名称 |
Thick extended contact photoconductor |
摘要 |
A semiconductor photoconductor having low impedance nonmetallic contacts is disclosed which has increased detectivity over prior art photoconductor structures. The improved photoconductor has metallic contacts that are separated by a contact length that is greater than the optical length of the detector. The contact regions of the semiconductor adjacent the detector region are thicker than the detector region. The process for fabricating the photoconductor includes thinning the detector region to an appropriate thickness while preserving the greater thickness of the contact regions.
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申请公布号 |
US4482881(A) |
申请公布日期 |
1984.11.13 |
申请号 |
US19820399267 |
申请日期 |
1982.07.19 |
申请人 |
THE AEROSPACE CORPORATION |
发明人 |
SCHOOLAR, RICHARD B.;FOTE, ALFRED A. |
分类号 |
H01L27/144;H01L31/0224;H01L31/08;(IPC1-7):H01L31/08 |
主分类号 |
H01L27/144 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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