| 摘要 |
PURPOSE:To improve the quality of an inside silicon oxide layer by a method wherein a substrate, which has a high melting point metal layer, a high melting point metal oxide layer, a silicon layer and a silicon oxide film, is subjected to the heat-treatment in the atmosphere containing hydrogen and the inside silicon oxide layer is formed between the high melting point metal layer and the silicon layer. CONSTITUTION:A high melting point metal layer 14, for instance an Mo layer by sputtering, is formed on a substrate 11. Then a high melting point metal oxide layer 21, for instance an MoO2 layer whose melting point is as high as approximately 1,900 deg.C and which is stable at high temperature, is formed by oxidizing the surface of the high melting point metal layer 14. A silicon layer 16 is formed on the high melting point metal oxide layer 21 and a cap layer 51 is formed on the silicon layer 16. Then the substrate 11 is subjected to the heat-treatment in the inert gas atmosphere containing hydrogen or in the hydrogen atmosphere so that the high melting point oxide layer 21 is reduced and at the same time the silicon layer 16 is oxidized from the inside, i.e. from the side of the high melting point metal layer 14, and an inside silicon oxide film 15 is formed between the high melting point metal layer 14 and the silicon layer 16. The inside silicon oxide layer 15 is formed on the whole surface of the high melting point metal layer 14. |
