发明名称 LEAD FRAME MEMBER FOR SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To obtain the titled member which does not break an Si chip by thermal stress by restricting the range of the composition of components of Fe radical alloy composed of Ni, Co, Mn, Fe, or Ni, Co, Mn, Si, Fe. CONSTITUTION:The member having the composition of 26-30% Ni, 11-16% Co, 0.1-0.8% Mn, remnant Fe, or 26-30% Ni, 11-16% Co, 0.1-0.8% Mn, 0.5% or less Si, remnant Fe is used. Thereby, the coefficient of thermal expansion of an obtained lead frame becomes 40-48X10<-1>/ deg.C, which leads to extreme proximity to the coefficient of thermal expansion 42X10<-1>/ deg.C of the Si chip of the IC. Therefore, the use of the lead frame obtained from the above-mentioned brings extremely micro difference of the amounts of thermal shrinkage between said chip and the lead frame, large chip dimensions, and great amount of heat generation. Even when the frame is in an LSI or a super LSI of the high possibility of the break in the Si chip, said chip comes to no break at all.
申请公布号 JPS59198741(A) 申请公布日期 1984.11.10
申请号 JP19830072657 申请日期 1983.04.25
申请人 NIPPON GAKKI SEIZO KK 发明人 SHINODA YOSHIO;WATANABE TSUYUKI
分类号 C22C38/00;C22C38/08;H01L23/48;H01L23/495 主分类号 C22C38/00
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