| 摘要 |
PURPOSE:To increase the degree of freedom of an Al wiring, and to obtain an IC of high density by forming a conductive layer of a predetermined shape on a gate insulating film, coating the conductive layer with an insulating film, removing one part of the insulating film and forming a semiconductor layer of a conduction type reverse to a substrate while being adjoined to the exposed conductive layer section. CONSTITUTION:A thick field oxide film 2 is formed to the peripheral section of a p type Si substrate 1 while using a p<+> type buried layer 10 as an underlay, the upper section of the substrate 1 surrounded by the oxide film 2 is coated with a thin first gate oxide film 3, and a first polycrystalline Si layer 4 is deposited on the whole surface containing the oxide film 3. The layer 4 and the film 3 are removed selectively, a second gate oxide film 5 is applied extending over the surface of the exposed substrate 1 from the upper section of the residual layer 4, a through-hole TH is bored to the film 5, and an n<+> type region 6 as a source or a drain is diffused and formed to the surface layer section of the exposed substrate 1. A second polycrystalline Si layer 9 being in contact with the region 6 is deposited on the whole surface and formed to a predetermined shape, a PSG film 11 is applied and a contact hole is bored, and an Al electrode 12 being in contact with the layer 9 is attached. |
