| 摘要 |
A chemical vapor deposition (CVD) reactor system comprising a substantially vertical reactor tube (14) having a gas inlet (22) and a gas outlet (28), a pedestal (40) mounted within the reactor tube (14) having means (46, 54, 56) for securing a substrate (50) thereto so that a surface of the substrate (50) is exposed downward, and means for providing a gas mixture (24) to the reactor tube (14), the gas mixture (24) being introduced into the reactor tube (14) via the gas inlet (22) and subsequently withdrawn via the gas outlet (28), the gas inlet (22) and outlet (24) being positioned, with respect to the substrate (50), below and above, respectively. The gas mixture (24) is maintained in substantially uniform plug flow as it is directed into close proximity to the exposed surface of the substrate (50). This permits the CVD growth of physically uniform layers, both in terms of thickness and composition, having low contamination concentrations over large substrate surface areas. |
