| 摘要 |
PURPOSE:To realize patterning using the same alignment mark for the normal and reverse pattern of mask pattern by making symmetrical the alignment mark forming region to the center line for the right and left and also making symmetrical each mark to the center line in the region for the right and left. CONSTITUTION:On the occasion of forming the alignment marks M, N to be used for the next exposing process in exposing processes on a semiconductor substrate 2, the alignment mark forming region 10 is set symmetrically to the center line C of the semiconductor substrate 2 for the right and left, and the alignment marks M, N are provided symmetrically to the center line of alignment mark forming region 10 for the right and left and are sequentially arranged in the longitudinal direction along the center line thereof. |
