| 摘要 |
PURPOSE:To obtain a high quality single-crystal film when a polycrystalline or an amorphous semiconductor film formed into an island shape is single- crystallized by applying an electron beam along the inside of the circumference boundary of the semiconductor film. CONSTITUTION:An SiO2 film 12 is formed on the upper surface of a P type single-crystal silicon substrate 11 of the plane orientation (100) and then an amorphous silicon film 13 is deposited on the film 12. After an element isolation domain of the amorphous silicon film 13 is selectively oxidized to form an SiO2 film 14, a protective SiO2 film 15 is formed on the whole surface. The silicon substrate 11 is heated approximately to 500 deg.C and an electron beam 16 is applied to anneal the silicon film 13. The beam 16 is moved round along the inside of the circumference of the island-shape amorphous silicon film 13 and the temperature gradient of the silicon film 13 is decreasing from the circumference to the center and the nucleus of the crystal growth is generated at the center only. |
