| 摘要 |
PURPOSE:To improve crystallizability when a phosphide substrate of InP substrate, etc. is to be heat-treated by a method wherein heat treatment is performed by adhering a protective film of phosphosilicate glass on the surface thereof. CONSTITUTION:After the surface of an InP substrate is cleaned using an organic solvent, the surface layer part is removed by 1-3mum according to chemical etching, and a PSG film made concentration of P2O5 to 20-50% is adhered thereto at thickness of 1,000-3,000Angstrom . Then after heat treatment of 650-750 deg.C is performed for 30-60min in an H2 atmosphere, it is cooled up to the room temperature, and the PSG film is etched to be removed using hydrogen fluoride. Crystallizability of the InP substrate is not deteriorated when heat treatment is performed like this, and crystallizability is improved rather. Accordingly, this method has a sufficient utility value for heat treatment recovery after ion implantation to the InP substrate, removal of lattice defects in the wafer, etc. |
