| 摘要 |
PURPOSE:To prevent the generation of leakage in the junction part due to the remaining of the metal constituting the upper electrode by a method wherein the lower electrode is exposed by removing the open groove which splits the upper electrode on a semiconductor into each element together with a semiconductor layer under said electrode. CONSTITUTION:The titled device has the first open groove 13, first element 31, second element 11, and joint 12. In this case, the open groove 13 slightly bores the substrate 1, and the second open groove 30 is provided to the semiconductor on the side of the first electrode 2 constituting the element 31, thus removing also the semiconductor 3, and making the electrode 2 thereunder remain. Thereby, the first electrode 37 of the element 31 and the second electrode 38 of the element 11 are coupled with each other at the upper surface 8 of the first electrode by means of a connector 30 extending from the electrode 38 at the joint 12, and the two elements are therefore directly coupled with each other. Further, the third open groove 20 is shifted to the side of the element 31. Thus, the open groove 20 is provided by boring a part of the connector part 30. In this manner, the second electrode 4 of each of the elements 31 and 11 is cut and isolated, and the leakage between these electrodes can be made extremely small. |
