| 摘要 |
PURPOSE:To make uniform distribution of film thickness perpendicular to the transfer direction of a substrate to a considerable extent by allowing positions of each point on the substrate of a specimen to cause deviation perpendicularly to the transfer direction when the substrate is moved in the transfer direction. CONSTITUTION:In a device 1 for continuous growth of thin film having a growth chamber of thin film 2 by the CVD process and a mechanism for transferring substrates of a specimen S on which thin films are to be grown to pass successively through the camber 2, a transfer member 5 tranfers the substrates S in the direction F by a transfer mechanism 6D and 6I and turns the substrates at the same time in the direction R. For example, an optional point A on the substrate S deviates perpendicularly to the tranfer direction in the chamber 2. Since all points on the substrate S are under almost the same condition, the distribution of film thickness grown on the substrate S become almost uniform in the lateral direction of thin film growth chamber over the whole area.
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