| 摘要 |
PURPOSE:To obtain a resist material having high sensitivity and resolution as well as superior heat resistance, dry etching resistance and plasma resistance by polymerizing a fluoromethylated styrene monomer with a styrene monomer. CONSTITUTION:A fluoromethylated styrene monomer is polymerized with a styrene monomer in a solvent in the presence of a polymn. initiator, and the resulting copolymer is used as a resist material. For example, 20-100mol% fluoromethylated styrene monomer represented by formula I is preferably polymerized with 80-0mol% styrene monomer represented by formula II in a solvent such as toluene at -80-250 deg.C in the presence of a polymn. initiator such as diisopropyl peroxydicarbonate. The weight average mol.wt. of the resulting copolymer is adjusted to 5,000-1million. In the formulae, each of R<1> and R<2> is H or methyl. |
