| 摘要 |
PURPOSE:To prevent the generation of a bird's beak and the like as well as to flatten the surface of the titled semiconductor device by a method wherein an isolation insulating layer is selectively removed in such a manner that the tip of the layer will be vertically formed. CONSTITUTION:A P type channel stopper 12, an insulating film 13 and an Si3N4 film 14 are formed on a P<-> type silicon substrate 11. Subsequently, after a window 15 having almost vertical edge has been formed by partially removing the films 13 and 14, an N<+> buried layer 16, an N type single crystal semiconductor layer 17 and a polycrystalline semiconductor layer 18 are formed. Then, the surface of the layers 17 and 18 is oxidized, and after SiO2 films 19 and 20 have been formed, the film 20 is removed. Subsequently, the layer 18 is removed using the film 19 as a protective film. Then, an N<+> collector 23 and a P<+> base 24 are formed in the layer 17, and after an N<+> emitter 25 has been formed in the base 24, a collector electrode 26, a base electrode 27 and an emitter electrode 28 are formed. |
