| 摘要 |
PURPOSE:To moderate the current being point-concentrated at the emitter region when the thyristor is turned off, by providing with gate electrodes on P-base regions exposed at the centers of ring emitters, and by utilizing the base regions positioned in the ring emitters as floating base regions. CONSTITUTION:N<+> regions 5, 6 are formed at the same time in the P-type region 3 and the base region 2, and the N<+> region 6 is served as an emitter of the GTO device. On the surface where the P<+> region 4 and the N<+> region 5 are arrayed with being neighbored with each other, an anode electrode 7 is formed. The N<+> region 6 has a ring emitter structure, and has an emitter electrode thereon. This conductive metal layer is extended over the insulating layer 9 coating another P-type base regions, and the pad 11 is possible to connect with another parts at the end of the semiconductor surface. Through sections of the insulating layer 9 from which neighboring emitter regions are positioned at the same distance, openings are bored and gate electrodes 12 are formed. Moreover, at the end of the semiconductor surface being positioned apart from the pad 11, a collecting pad 13 is formed, being able to be connected with another parts. |
