| 摘要 |
PURPOSE:To remove thyristor parasitic effect by a method wherein a low resistance region is connected between a P<+> type isolation region with which an epitaxial layer will be P-N isolated and an island region where an N<+> type diffusion region is provided, or between an island region where a P<+> type diffusion region is provided and a P<+> type diffusion region. CONSTITUTION:An epitaxial layer 12 is provided on a P type silicon semiconductor substrate 11. Said layer 12 is isolated into the first - third island regions 13, 14 and 15 using a P type isolation region 16. The terminals A and B of the resistance region 19 formed on the third island region 15 are connected to either of the terminals A1 and B1 located between the P<+> type diffusion region 17 and the region 13 provided on the region 13, or either of terminals A2 and B2 located between a P<+> type isolation region 16 and the second island region 14 where an N<+> type diffusion region 18 is provided, or they are connected to both of the terminals. As a result, resistors R are connected between the base and the emitter of transistors Tr1 and Tr2, and the voltage between the base and the emitter is brought to approximately 0.3V, thereby enabling to prevent the turn-ON of the parasitic thyristor. |
