| 摘要 |
PURPOSE:To obtain an excellent crystal having uniform crystal layer, by applying rotational force forcibly to the flow of reaction gas, and at the same time, carrying out the crystal growth inspecting the growing state with X-ray, etc. CONSTITUTION:The reaction gas for crystal growth (e.g. organometallic compound, hydrogen compound, etc.) introduced from the reaction gas inlet 15 is rotated with the blades 16, and is made to contact uniformly with the whole surface of the substrate crystal 13. At the same time, the surface of the substrate crystal is irradiated with light or X-ray to inspect the process of crystal growth. The crystal layer can be grown uniformly over the whole surface of the substrate crystal by this process, and a crystal having excellent quality can be obtained. |
