| 摘要 |
PURPOSE:To prevent an Al layer from corroding while minimizing the contact resistance of interlayer connection by a method wherein the first and second Al wiring layers holding an insulating layer are formed on a multiple crystal Si layer while a part of the upper second Al wiring layer is pierced through the first Al wiring layer and the insulating layer to be connected to an Si layer. CONSTITUTION:A multiple crystal Si layer 21 is grown on an insuating film 20 between lower layers and the layer 21 is coated with the first Al wiring layer 22 while the layers 21 and 22 are patterned by using photoresist. Next the layer 22 and the exposed end of the film 20 are coated with interlayer insulating film 23 made of PSG or SiO2 while a throughhole is made into the film 23 to expose a part of the layer 21 and the throughhole is coated with the second Al wiring layer 24 to be extended over said film 23. Through these procedures, the contact resistance of the Al wiring layer due to corrosion may be prevented from happening to improve the operation of IC and the like. |
