| 摘要 |
A multi-layer connection structure of a semi-conductor device is described, which is provided on a semi-conductor substrate (1), said multi-layer connection structure having conductive layers (3a, 3b and 8a) and an insulating layer (4), which are provided so as to overlap on the semi-conductor substrate (1), and further having an interlayer (12a) which is provided between the upper conductive layer (8a) and the insulating layer (4). The conductive layers (3a, 3b and 8a) consist of aluminium or of aluminium-containing alloys, and the insulating layer (4) consists of silicon nitride or silicon oxide. The interlayer (12a) consists of titanium or of a titanium-containing alloy and has strong adhesion to the conductive layer (8a) and to the insulating layer (4). The interlayer (12a) serves as a barrier for preventing the reaction between the conductive layer (8a) and the insulating layer (4). In said multi-layer connection structure with the interlayer (12a), the conductive layer (8a) never buckles separately from the insulating layer (4), even if a heat treatment is applied. <IMAGE> |
