| 摘要 |
PURPOSE:To obtain a DRAM having high integration, high speed and no danger of shortcircuit by forming a capacitance element of a structure that is made of a Schottky junction formed in an N type well. CONSTITUTION:A dense N type impurity 3 is introduced to a field 13 in an N- well 2, a dense P type impurity 12 is introduced to a P type substrate 1, and oxidized to form a field. The dense N type impurity is introduced to form an accumulator 4, and a Schottky junction is formed in the accumulator. Accordingly, a silicide 5 is covered. A P type MOS is covered to form an N type MOS gate oxidized film 14, a gate electrode 7, source and drain 6, an N type MOS is covered to form a P type MOS gate electrode 7, source and drain 10. An interlayer insulating film 9 is covered to form a through hole, and aluminum 11 is covered and etched. Since Al-n structure is used, no problem of a shortcircuit like the case of Al thin n type layer p is provided. |
