Complementary field-effect transistor

摘要

A complementary field-effect transistor exhibits a contacting diffusion area (7) for contacting a substrate (1) adjacently to a source diffusion area (3) of a field-effect transistor (20) which is a part of the complementary field-effect transistor. To improve the latch-up resistance, the contacting diffusion area is constructed with a greater depth of diffusion than the source diffusion area, the contacting diffusion area covering at least a part of the lower area of the source diffusion area. <IMAGE>