发明名称 NONVOLATILE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable to use a volatile memory as a nonvolatile one by a method wherein two terminals, one is an ordinary power source terminal and the other is a power source terminal having a switch which is turned ON or OFF by the potential of the main power source, are provided on the volatile memory. CONSTITUTION:The main power source 3, the volatile memory 1 and a power source unit 2 are connected respectively. Said memory 1 has two power source terminals, one is an ordinary power source terminal 6 and the other is a power source terminals 7 having a switch SW1 which is turned ON or OFF by potential of the main power source 3. Said switch SW1 is MOSFET, and a substrate is grounded by connecting a drain and a gate. Also, said power source unit 2 consists of a battery 9 which functions as a power source, and an MOSFET consists of a switch SW2 which is turned ON or OFF by the potential of the main power source 3. Its gate is connected to the terminal 7 for which the main power source 3 will be directly supplied, a drain is connected to the power source terminal 6 of the volatile memory, and a GND is connected to a GND terminal.
申请公布号 JPS59186361(A) 申请公布日期 1984.10.23
申请号 JP19830060144 申请日期 1983.04.06
申请人 MATSUSHITA DENKI SANGYO KK 发明人 SHIYOUREN SHIROJI;WATARI SHIGERU;SUGANO MASAHIDE;YAMAGUCHI SEIJI;KOTANI HISAKAZU;TANIGUCHI TAKASHI
分类号 G11C11/413;H01L27/06;H01L27/10 主分类号 G11C11/413
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