| 摘要 |
PURPOSE:To enable to manufacture a PD and an FET of small leakage current, an LD of a long lifetime and an LED of a high luminous efficiency on the same substrate by a method wherein the substrate for epitaxial growth of a III-V group compound semiconductor optical integrated device is a P type substrate whose carrier concentration is over a specific value. CONSTITUTION:Said substrate of said device is a P type substrate whose carrier concentration is over 10<18>cm<-3>. Thereby, the dislocation density of a crystal of InP, etc. can be made zero, i.e., put in non dislocation, and therefore the dislocation of the epitaxial layer can be reduced. When the carrier concentration is under 10<18>cm<-3>, the dislocation density can not be made zero, therefore the dislocation of the epitaxial layer can not be reduced. For example, since an N- InGaAsP 2 and the P<+> InP substrate 9 are reversely biased, the leakage current is small. Besides, the dislocation included in each element can be reduced, accordingly it becomes possible to manufacture the PD and FET of small leakage current. |
