| 摘要 |
PURPOSE:To form islands of semiconductor thin film having high quality of crystal on an insulating substrate without causing disappearance of the semiconductor thin film or generation of cracks by forming the semiconductor thin film formed before fusing with heat into islands formed on the insulating board as well as by forming a covering film having higher melting point than said semiconductor thin film. CONSTITUTION:A polycrystalline silicon layer 2 formed on a main surface of an insulating substrate 1 composed of a fused crystal board forms islands divided into plurality on the insulating substrate 1. On these islands, an SiO2 film 3 is formed and covers a surface of each insular polycrystalline silicon layer 2 including its side planes. Heat treatment is performed so as to fuse the polycrystalline silicon layer 2 by heat. Then it is grown again and an SOI-type seniconductor wafer can be obtained. In the SOI-type semiconductor wafer thus obtained, a silicon film having high quality of crystal and a large diameter of crystal grain can be formed on the insulating substrate 1. |
