| 摘要 |
PURPOSE:To obtain the titled device of a low threshold value by making the current in the crystal concentrated to the neighborhood of the center of an active layer by a method wherein a current blocking layer narrower than the width of the active layer is arranged under the active layer. CONSTITUTION:A groove narrowed by an N-InP layer 3 reaching a P-InGaAsP layer 2 is formed by advancing etching from a window 8 of the width 2mum to the laminated body wherein said layers 2 and 3, a P-InP layer 4, an N-InP layer 5, and an N-InGaAsP layer 6 are successively laminated. A groove of the width 1mum is formed in the layer 2 by etching this wafer, and an N-InP layer 9, an N- InGaAsP active layer 10, a P-InP layer 11, and a P-InGaAsP cap layer 12 are successively grown, when said layer 10 presents a crescent form that it becomes narrow to right and left with the neighborhood of the center approx. 0.2mum. A P-InGaAsP current blocking layer 2 of the width 1mum is constituted to approx. 0.3mum immediately under said form, and the current in operation concentrates to the neighborhood of said layer 10 of the crescent form. The optimum range of the thickness of said layer 2 is 0.5-1mum. |
