| 摘要 |
PURPOSE:To enable the mass production of thin films with high purity by preventing inclusion of impurities caused by a material of the container and deterioration and breakage of a nozzle of the container by a method wherein a substance in gas-form including an element to be vapor-deposited is introduced into the container, where the gas plasma is generated and is injected from the nozzle. CONSTITUTION:Monosilane gas SiH4 12 which is in gas form in room temperature is introduced into a container 1 as a gas-form substance including an element to be vapor-deposited as the composing element. At this time, if pressure P outside the container is predetermined to be 10<-5>-10<-7>Torr, pressure Po inside the container is predetermined to be 10<-2>-10<-1>Torr, or more so as to satisfy the condition Po/P>10<4-5> for generating a cluster beam. The monosilane gas SiH4 12 is made into gas plasma 18 by a gas plasma generating mechanism composed of a high frequency coil 16 and a high frequency power source 17 arranged outside of the container 1. The gas plasma 18 in this state is injected from a nozzle 7 surrounded by nozzle-part heater 21 and ionized cluster beam 11 is formed by a pressure ratio of inside and outside of the container 1. |
