发明名称 |
VERTICAL JUNCTION FIELD-EFFECT TRANSISTOR AND PROCESS FOR ITS PRODUCTION |
摘要 |
This transistor comprises a first main surface of alternating source and gate strips. A gate metallization rests on the gate strips and a source metallization rests on a polycrystalline silicon rail formed above the source strips. Such a device can be manufactured by entirely self-aligned methods and is applicable particularly to the very high frequency range up to a few dozen gigahertz. |
申请公布号 |
DE3260721(D1) |
申请公布日期 |
1984.10.18 |
申请号 |
DE19823260721 |
申请日期 |
1982.06.04 |
申请人 |
THOMSON-CSF |
发明人 |
BRIERE, PIERRE |
分类号 |
H01L21/3213;H01L21/337;H01L29/04;H01L29/08;H01L29/417;(IPC1-7):H01L29/80;H01L21/30 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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