METHOD OF IMPROVING THE CONDUCTIVITY OF A MICROELECTRONIC CONDUCTIVE TUNGSTEN SILICIDE FILM AND SEMICONDUCTOR DEVICE COMPRISING SAID FILM

摘要

A method for preparing a highly conductive layer utilizing a layer of Pt in conjunction with sputter deposited or co-evaporated WSi2 to enhance the conductivity increase of the WSi2 layer occurring during annealing is described. The Pt layer is deposited as a thin layer directly on top or beneath the WSi2 layer or may be incorporated within the WSi2 layer. During annealing platinum atoms diffuse into the WSi2 film resulting in lower resistivity values than in comparable deposited annealed film wherein the Pt layer has been omitted.