| 摘要 |
PURPOSE:To improve the parallelism of ion beams and to improve the efficiency and yield of an operation by disposing a magnet, etc. around a grid electrode for accelerating ion and decreasing the leakage magnetic field from a plasma chamber side. CONSTITUTION:An ion etching device consists of a plasma chamber 2, an etching chamber 3 in which an object 8 to be worked is placed, a grid electrode 1 for electrostatic acceleration to be interposed between the chambers 2 and 3, and a coil 12 or magnet 13 for decreasing the magnetic field leaking from the chamber 2 side disposed around the electrode 1. A coil 6 for generating a magnetic field is wound around the chamber 2 to improve plasmatization efficiency. Inert gas or reactive gas is ionized in the chamber 2 and the ions are acclerated by the electrode 1 to collide against the object 8. The parallelism of the ion beams is improved by the above-mentioned device, by which a desired pattern is obtd. and the efficiency and yield of the operation is improved.
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