| 摘要 |
PURPOSE:To obtain a color developing type memory element which can realize a fine color developing pattern by forming partly at least an Li ion-contg. material by vapor deposition or ion implantation on a tungsten oxide film. CONSTITUTION:A tungsten oxide film 3 is formed by sputtering vapor deposition on a substrate 2 having a reflection film 1 of Al. A fine pattern 4 is formed by using a mask, etc. thereon and LiNbO3 5 contg. Li ion is formed thereon by sputtering vapor deposition. The ion intrudes into the tungsten oxide film only in said part by the vapor deposition, thereby forming a color developing pattern of about 1mum or below. The material 5 contg. Li ion to be deposited by sputtering deposition in this case exhibits color development even if said material is, for example, Li2WO4, LiN, etc., and is any material contg. Li is usable as far as said material is transparent. The film 1 provides substantial sensitivity with transmitted light as well. |
