| 摘要 |
PURPOSE:To prepare the titled film having highly sensitive photoconductivity, easily, by introducing a CF4-containing gas into a reaction chamber to deposit an F-containing Si compound, setting a substrate in the chamber, introducing a reaction gas, and decomposing the Si compound by glow discharge. CONSTITUTION:A mixed gas obtained by mixing CF4 with O2 or H2 is introduced into a reaction chamber, and a compound of F and Si is formed by glow discharge decomposition process. A substrate having ohmic electrode is set in the chamber, a gaseous mixture of SiH4 and H2 is introduced, and an F-containing amorphous silicon film is deposited by glow discharge decomposition. It is not necessary to use hardly handleable SiF4, and the amount of introduced F can be controlled continuously only by controlling the film-forming condition of the F-containing a-silicon film in contrast to the case using SiF4. Accordingly, the growth of an F-containing amorphous silicon film, which hitherto has been difficult to achieve, can be carried out easily.
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