| 摘要 |
PURPOSE:To increase photosensitivity to near IR light of an Si photosensitive body by providing an amorphous silicon barrier layer which contains a specific impurity, contains specific atomic% oxygen in the stage of starting layer formation and is gradually decreased in the content of oxygen during the layer formation. CONSTITUTION:An amorphous silicon barrier layer 2 which contains impurity of IIIa group of the periodic table, contains 0.1-20.0atomic% oxygen in the stage of staring layer formation and is decreased gradually in the content of oxygen during layer formation is provided on a conductive substrate 1. An amorphous silicon photoconductive layer 3 contg., for example, 10<-5>-5X10<-2>atomic% oxygen is provided thereon. An amorphous silicon surface protective layer 4 which is gradually increased in the content of oxygen during layer formation and contains 1.0-60.0atomic% oxygen when the layer formation ends is provided thereon. |
