| 摘要 |
PURPOSE:To obtain a negative type resist high in sensitivity, superior in dry etching resistance, and capable of attaining high resolution by using a specified acetalized PVA. CONSTITUTION:Polymer used herein is PVA converted into acetal which has a -(CH2)n-H group, n being >=5, in the acetal part of the acetalized PVA, and has a mol. wt. of 10,000-1,000,000. A preferable acetal molar fraction is 20-30%. This PVA is dissolved in a solvent to form a 5-15% resist soln, and a 0.1-2mum thick resist film is formed by coating a substrate with this soln. and prebaking it. The film is patternwise exposed and the unexposed parts are dissolved off with a developing soln. to form a resist pattern. |
