HIGH VOLTAGE MOS BIPOLAR POWER TRANSISTOR UNIT

摘要

A high voltage MOS/BIPOLAR power transistor assembly is described comprising in a monolithic embodiment thereof, an N channel MOSFET which is integrated with a PNP transistor. A P<+> substrate emitter provides hole injection into an N base layer thereby insuring through conductivity modulation a low "on" resistance. The base current IB which is regulated by the channel resistance eliminates hot spots, forward-biased second breakdown and current hopping.