| 摘要 |
PURPOSE:To make the threshold value of the titled semiconductor laser element lower and to make the efficiency thereof higher by a method wherein two active layers are provided on a semiconductor substrate, a clad layer between the two active layers is made to serve both as a contact layer of electrode and a laser beam having a different wavelength is made to oscillate from the parts of the active layers corresponding to the stripe-shape protruded parts of two optical waveguide layers. CONSTITUTION:A first current stopping layer 2 and a stripe-shaped groove 5 are formed on a semiconductor substrate 1. After a mask layer 3 was removed, a first optical waveguide layer 6 is grown. A first active layer 8, a clad layer 9, a second active layer 10, a second optical waveguide layer 11 and a stripe mask layer are formed thereon in order. Then, a protruded part, a second current preventing layer 14, a contact layer 15 and a mask layer are formed. An etching is performed on the contact layer 15, the second current stopping layer 14, the second optical waveguide layer 11, the second active layer 10 and one part of the clad layer 9 by using this mask layer as the mask. After the mask layer was removed, an electrode 17 is formed on the contact layer 15, an electrode 18 on the exposed surface of the clad layer 9 and an electrode 19 on the semiconductor substrate 1 as well. |
