摘要 |
PURPOSE:To increase the density and speed of an LSI and VLSI by forming 3 element-switch element in one conductive type semiconductor substrate. CONSTITUTION:N type regions A, B are provided on a P type semiconductor substrate 1 to form a source region and a drain region, a P type region C is formed as a gate electrode through a gate insulating film 2, thereby constructing an MOS transistor T1. Further, P type region C is bonded as a channel region with N type regions D, E perpendicularly crossed as a source region and a drain region, and a conductor F is provided as a gate electrode through a gate insulating film 3, thereby forming an MOS transistor T2. Thus, the electrode (a) is connected to the region A, the electrode (b) is connected to the region B and the conductor F, the electrode (d) is connected to the region D, the output that electrodes (b), (a) become ON or OFF by the signal of the electrode (d) is obtained. |