| 摘要 |
PURPOSE:To obtain a photoconductive material having high sensitivity in a wide wavelength region by alternately laminating five or more layers in total of the 1st layers contg. a specified VIb group chalcogen element as the principal component and the 2nd layers contg. a specified IIb group element and forming a pontential barrier between the 1st and the 2nd layers. CONSTITUTION:A photoconductive material having a laminated structure is obtd. by alternately laminating five or more layers in total of the 1st layers contg. one or more VIb group chalcogen elements in the periodic table selected among S, Se and Te and the 2nd layers contg. a IIb group element selected among Zn Cd and Hg by vapor deposition or other method. The thickness of each of the 1st and the 2nd layers is 2-1,000Angstrom . A potential barrier of ZnS, CdSe, Cd.Se.Te or the like is formed between the 1st and the 2nd layers to provide rectifying action and to reduce dark current. When light is irradiated, the electric conductivity is improved, and high sensitivity is attaind in a range from light of a shorter wavelength to light of a longer wavelength.
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