| 摘要 |
PURPOSE:To form a uniform insulating film on a plurality of tunnel insulating film forming portions by disposing and plasma oxidizing a conductive layer on the insulating film around the tunnel insulating film forming portions formed on a substrate. CONSTITUTION:An oxidized silicon layer 27 is selectively formed on a base electrode 26, and a photoresist layer 28 having a hole pattern for forming upper electrode is formed on the layer 27. Then, a metal layer 29 is formed on the portion except the hole for the electrode. Then, the surface of the electrode 26 is plasma oxidized to form a tunnel insulating film 30. Subsequently, the upper electrode material is covered on the film 30 and the layer 28, the layer 28 and the layer 29 are removed to form an upper electrode 31.
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