| 摘要 |
PURPOSE:To improve the element characteristic by forming a semiconductor multilayer layer having an active layer, a waveguide layer and a clad layer on a semiconductor substrate having a slot, forming the waveguide layer corresponding to the slot, and reversing the conductive type of the active layer. CONSTITUTION:An N type AlGaAs clad layer 43 is formed on an N type GaAs substrate 46 formed with a slot 70, and an N type AlGaAs waveguide layer 45 is further formed. The layer 45 has fast growing velocity on the slot 70, and the thickness becomes large. An N type AlGaAs active layer 1, a P type AlGaAs clad layer 2 and an N type GaAs cap layer 4 are sequentially formed thereon. A P type impurity such as Zn is selectively diffused in the regions 9, 10 in response to the position of the slot 70, the conductive type of the layer 1 is converted from N type to P type, thereby forming a striped oscillation region. |
