| 摘要 |
PURPOSE:To omit a buffing step by eliminating the possibility that unnecessary deposited film is formed when forming a reflection preventing film by forming a gas substitution structure on the plane for mounting a semiconductor substrate of the susceptor used in a step of forming a reflection-preventing film. CONSTITUTION:In a susceptor 301 used in a step of forming a reflection- preventing film by CVD technique, a step part 302 for composing a gas substitution structure is formed on the plane where a wafer 300 on which a P-type AlGaAs layer 103 is formed is mounted flat. Because of the existance of the step part 302, a residual gas such as oxygen gas is not enclosed between an N-type GaAs semiconductor substrate 100 an the susceptor 301 when forming a reflection-preventing film 104. Consequently, undesirable deposited film due to the residual gas is not formed. |
