| 摘要 |
PURPOSE:To obtain a capacitor of excellent area efficiency and fixed coefficient of temperature by a method wherein a region of the other conductivity type is formed in a semiconductor substrate of one conductivity type, a region of one conductivity type is provided in said region, thus generating the first capacitor at the boundary surface between the regions of the other conductivity type and one conductivity type, and then the second capacitor is generated between the region of one conductivity type and an surface electrode via insulation film. CONSTITUTION:An N type layer 7 is epitaxially grown on the P type Si substrate 6, the layer 7 is formed into an island by a P type insulation region 5, where a P type region 10 is diffusion-formed, and an N<+> type region 4 is provided therein. Next, the entire surface is convered with an SiO2 film 3, an aperture is bored, an Al electrode 11 is mounted on the region 4, and an Al electrode 12 extending on the film 3 is adhered on the region 10. Thus, the capacitor C1 is generated at the interface between the regions 4 and 10, and the capacitor C2 between the region 10 and the electrode 12, and accordingly the synthetic capacitor C01 is made as C01=C1+C2. Otherwise, the electrode 14 is mounted on the region 10, and an electrode 13 not connected to either regions is adhered on the film 3, thereby making the synthetic capacitance C02=(C1X C2)/(C1+C2). |
